Models of Infineon IGBT modules:
Voltage specification:
DC bus/grid voltage IGBT voltage specification
300V DC (max. appr. 450V DC) 600 V
600V DC (max. appr. 900V DC) 1200 V
750V DC (max. appr. 1100V DC) 1700 V
upt to 1300V DC controlled 2500 V
1500V DC (max. appr. 2100V DC) 3.3 kV (or2x 1700 V in series/3-level)
up to 2500V DC controlled 4.5kV
3000V DC (max. ca. 4500V DC) 6.5 kV (or2 x 3.3 kV in series/3-level)
2.3kV AC (≈3.3kV DC) Same as above
4.16kV AC (≈5.9kV DC) 6.5 kV in series/3-level
6.6kV AC (≈9.4kV DC) multi-level
Datasheet RBSOA:
Cosmic rays can cause failure of IGBT/FWD, failure rate (FIT)
It is related to DC bus voltage, altitude and junction temperature.
Example: 1700V IGBT Module FIT vs DC-link Voltage
For cosmic rays, FIT multiplies with altitude.
Current specification:
Circuit form:
The more complete the form, the higher the cost performance and the higher the power density;
Advantages of parallel connection: low power density, small substrate temperature (case temperature) fluctuation
Module package:
Thermal Simulation Results
Acc. IEC61800-5-1
Application level: traction level industrial level
Substrate: AlSiC Cu
Substrate: AlN/ Optimized Al2O3
Power Cycle: Optimized Standard
Thermal Cycle: Optimized Standard
Insulation: 4 kV 3.4 kV
[RMS, 50Hz, 1 Min.] 6kV 10.2kV
High reliability and low cost
Power Cycling: Medium & High Power Modules (Tjmax = 125°C)
